Title :
AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure
Author :
Hikita, Masahiro ; Yanagihara, Manabu ; Nakazawa, Kazushi ; Ueno, Hiroaki ; Hirose, Yutaka ; Ueda, Tetsuzo ; Uemoto, Yasuhiro ; Tanaka, Tsuyoshi ; Ueda, Daisuke ; Egawa, Takashi
Author_Institution :
Semicond. Device Res. Center, Semicond. Co., Osaka, Japan
Abstract :
We have developed a high-power AlGaN/GaN HFET fabricated on 4-in conductive Si substrate with a source-via grounding (SVG) structure. The SVG structure enables efficient chip layout and high packing density by the vertical configuration. By establishing a high-quality epitaxial technology on a Si substrate and by significantly reducing the parasitic resistance, a very low specific on-state resistance of 1.9 mΩ·cm2 is achieved. The breakdown voltage is as high as 350 V, which is attributed to the Si substrate acting as a backside field plate. Because of reduction of the parasitic inductance, very high level of current (2.0 kA/cm2) transients, i.e., a turn-on time of 98 ps and a turn-off time of 96 ps, are successfully measured for the first time.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; power field effect transistors; semiconductor device breakdown; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor-insulator-semiconductor devices; wide band gap semiconductors; 1.9 mohm; 350 V; Si-AlGaN-GaN; back-side field plate; chip layout; heterojunction field-effect transistors; high breakdown voltage; high packing density; high-power switching device; high-quality epitaxial technology; low specific on-state resistance; power HFET; silicon substrate; source-via grounding structure; Aluminum gallium nitride; Current measurement; Gallium nitride; Grounding; HEMTs; Inductance measurement; MODFETs; Silicon; Substrates; Time measurement; AlGaN/GaN heterojunction field-effect transistors (HFETs); Si substrate; back-side field plate; high breakdown voltage; high-power switching device; low specific on-state resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.854265