Author_Institution :
Res. Center COM, Tech. Univ. Denmark, Lyngby, Denmark
Abstract :
Ge-doped silica-on-silicon waveguides with index steps of 0.01 and 0.02 were fabricated by a combination of plasma enhanced chemical vapour deposition (PECVD) and reactive ion etching (RIE) techniques, and their characteristics, including propagation loss, coupling loss with standard singlemode fibres, minimal bend radius, and birefringence, were investigated. The waveguides have good propagation properties and small birefringence, compared to using flame hydrolysis deposition (FHD).
Keywords :
birefringence; optical losses; optical waveguides; plasma CVD; refractive index; silicon compounds; sputter etching; Ge-doped silica-on-silicon waveguide; SiO2:Ge-Si; birefringence; coupling loss; index contrast; minimal bend radius; plasma enhanced chemical vapour deposition; propagation loss; reactive ion etching; standard single-mode fibre;
