Characterisation of nickel germanide formed on amorphous and crystalline germanium

Author

Algahtani, Fahid ; Pirogova, Elena ; Holland, Andrew ; Blackford, Mark ; McCallum, J.C. ; Johnson, Brett C.

Author_Institution

Electr. & Comput. Eng, RMIT Univ., Melbourne, VIC, Australia

fYear

2014

fDate

27-29 Aug. 2014

Firstpage

366

Lastpage

369

Abstract

Nickel germanide formed on amorphous and crystalline germanium is investigated for material and electrical properties. The crystal quality of films formed is poorer for the germanides formed on amorphous germanium with a slight increase in sheet resistance. The grains of NiGe formed on amorphous germanium show a growth that is hexagonal like, extending into the substrate further than germanides grains formed on crystalline germanium. The NiGe formed on crystalline germanium has a much more uniform thickness and uniform grain size and shape. Hollow cone illumination shows that some recrystallisation of the amorphised region of germanium does occur.

Keywords

electrical resistivity; grain size; nickel compounds; recrystallisation; thin films; NiGe; amorphous germanium; crystal quality; crystalline germanium; electrical properties; grain size; hollow cone illumination; nickel germanide; recrystallisation; sheet resistance; thin films; Educational institutions; Germanium; Lighting; Nickel; Ohmic contacts; Substrates; Nickel germanide and crystalline germanide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2014 IEEE International Conference on

Conference_Location

Kuala Lumpur

Type

conf

DOI

10.1109/SMELEC.2014.6920873

Filename

6920873