Effects of annealing temperature on dielectric property of nano-films lead titanate prepared on ITO glass by spin coating method

Thin films capacitor is one of the most potential devices for storage application. This study managed to perform high performance thin films fabrication through low cost spin coating method and prepared at low annealing temperatures. On top of that, the role of substrate is also being discussed in order to improve the dielectric and ferroelectric property of the nano-thickness thin films. As in our study, ITO coated glass substrate is very suitable compared to ordinary soda lime glass substrate. It was found that the optimal dielectric permittivity, ε is about 150 for the thin films prepared by 500 C annealing temperature measured at 1 kHz frequency. A 199-nm thin film was obtained by two cycles of coating/heating process. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) showed the surface of these films to be high densification with low surface roughness (ra=0.318 nm). It is believed that high electrical properties are attributed to the microstructural property by which homogenous interfacial layer between films and electrode base.