Design and scaling of a SONOS multidielectric device for nonvolatile memory applications

Author

French, Margaret L. ; Chen, Chun-Yu ; Sathianathan, Harikaran ; White, Marvin H.

Author_Institution

Dept. of Comput. Sci., Elizabethtown Coll., PA, USA

Volume

17

Issue

3

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

390

Lastpage

397

Abstract

The evolution of high-density EEPROM´s continually imposes a demand on reducing power consumption while improving data retention and endurance. To meet these demands, we propose a scalable multidielectric nonvolatile memory technology where the data storage is in the form of charge trapping within the oxide-nitride-oxide (ONO) gate dielectric. This technology, called SONGS (polysilicon-blocking oxide-silicon nitride-tunnel oxide-silicon), has demonstrated remarkable scalability in programming voltage. To determine our scaling guidelines, we have developed an analytical model for the transient characteristics that examines the influence of the dielectric composition and programming voltage on programming speed. These guidelines have resulted in a scaled SONGS nonvolatile memory device that has demonstrated 8-9 V programmability with an extension towards 5 V and can be used as an ideal candidate for semiconductor disk, NVRAM, and neural network applications

Keywords

EPROM; MOS integrated circuits; integrated circuit technology; integrated memory circuits; random-access storage; 5 to 9 V; NVRAM; ONO gate dielectric; SONOS multidielectric device; Si-SiO₂-Si₃N₄-SiO₂-Si; analytical model; charge trapping; data endurance; data retention; data storage; dielectric composition; high-density EEPROM; nonvolatile memory device; polysilicon; power consumption; programming speed; programming voltage; scalability; scalable nonvolatile memory technology; scaling guidelines; semiconductor disk application; transient characteristics; tunnel oxide; Analytical models; Dielectrics; EPROM; Energy consumption; Guidelines; Nonvolatile memory; SONOS devices; Scalability; Transient analysis; Voltage;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on

Publisher

ieee

ISSN

1070-9886

Type

jour

DOI

10.1109/95.311748

Filename

311748