DocumentCode
11495
Title
The Comparison of (Ag,Cu)(In,Ga)Se 
and Cu(In,Ga)Se Thin Films Deposited by Th
Author
Lei Chen ; Jinwoo Lee ; Shafarman, W.N.
Author_Institution
Dept. of Phys. & Astron., Univ. of Delaware, Newark, DE, USA
Volume
4
Issue
1
fYear
2014
fDate
Jan. 2014
Firstpage
447
Lastpage
451
Abstract
(Ag,Cu)(In,Ga)Se2 and Cu(In,Ga)Se2 thin-films with bandgap ~1.35 eV were deposited by a three-stage elemental coevaporation process. The depositions were conducted at substrate temperatures of 580 °C and 650 °C to understand the effects of Ag alloying and high growth temperature on material properties. Ag/(Ag+Cu) and Ga/(In+Ga) gradients were observed and were reduced with higher growth temperature. Grain size was quantified and found to be enhanced by Ag and high growth temperature, while film texture showed no significant change with different deposition conditions.
Keywords
alloying; copper alloys; evaporation; gallium alloys; grain size; indium alloys; selenium alloys; semiconductor growth; semiconductor thin films; silver alloys; ternary semiconductors; (AgCu)(InGa)Se2; Ag alloying effects; Cu(InGa)Se2; bandgap; film texture; grain size; high growth temperature; material properties; temperature 580 degC; temperature 650 degC; thin film deposition; three-stage elemental coevaporation; Diffraction; Films; Gallium; Grain size; Photonic band gap; Temperature; X-ray diffraction; (Ag,Cu)(In,Ga)Se$_{2}$
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2013.2280471
Filename
6600988
Link To Document