DocumentCode :
1149894
Title :
Photoexcited resonance-enhanced nitrogen-trap GaAs1-x Px :N laser
Author :
Holonyak, Nick, Jr. ; Dupuis, Russell D. ; Macksey, H. ; Zack, Gregory W. ; Craford, M. George ; Finn, Donald
Author_Institution :
University of Illinois, Urbana, IL, USA
Volume :
9
Issue :
2
fYear :
1973
fDate :
2/1/1973 12:00:00 AM
Firstpage :
379
Lastpage :
383
Abstract :
Data (77 K) on 
and 
N-doped GaAS1-x Px are presented showing that the electron-hole recombination probability may be resonantly enhanced when the crystal composition is varied and the 
conduction band minimum is made degenerate, or nearly degenerate, with the 
-line N isoelectronic trap state ( 
eV, 
). Data on GaAs1-x Px :N suggest that resonant enhancement occurs in a "turning" range 
meV. A consequence of this work is that photopumped GaAs1-x Px :N ( ) exhibits laser operation at the unusually high photon energy of 2.032 eV (6100 Å, orange). The idea of resonance-enhanced recombination and the results now demonstrated in GaAs1-x Px :N are general enough to be applicable also to p-n junctions.
and N-doped GaAS conduction band minimum is made degenerate, or nearly degenerate, with the -line N isoelectronic trap state ( eV, ). Data on GaAs meV. A consequence of this work is that photopumped GaAs ) exhibits laser operation at the unusually high photon energy of 2.032 eV (6100 Å, orange). The idea of resonance-enhanced recombination and the results now demonstrated in GaAsKeywords :
Doping; Electron traps; Erbium; Gallium arsenide; Laser transitions; P-n junctions; Photoelectricity; Resonance; Spontaneous emission; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1973.1077464
Filename :
1077464
Link To Document :
