DocumentCode :
1149925
Title :
Effects of carrier transport on relative intensity noise and critique of K factor predictions of modulation response
Author :
Nagarajan, Radhakrishnan ; Ishikawa, Masatoshi ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
28
Issue :
9
fYear :
1992
fDate :
4/23/1992 12:00:00 AM
Firstpage :
846
Lastpage :
848
Abstract :
The maximum possible intrinsic modulation bandwidth in semiconductor lasers is conventionally written in terms of the K factor. Although this is often sufficient in bulk lasers, it is usually not true in quantum well lasers where carrier transport can significantly affect the high speed properties. Analytical expressions are presented, which include the effects of carrier transport, for the modulation response and the relative intensity noise in quantum well lasers. It is shown that in the presence of significant transport effects, the K factor is not an accurate measure of the maximum possible intrinsic modulation bandwidth.
Keywords :
semiconductor junction lasers; semiconductor quantum wells; K factor; RIN; carrier transport effects; high speed properties; maximum possible intrinsic modulation bandwidth; modulation response; quantum well lasers; relative intensity noise; transport effects;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920535
Filename :
135130
Link To Document :
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