Title :
Novel ELFIN (embedded-metal-layer process for fully integrated NOR) cell for 16/64 Mbit flash EEPROM
Author :
Ohno, M. ; Ono, Takahito ; Uchiyama, Asami
fDate :
7/21/1994 12:00:00 AM
Abstract :
A novel cell structure named ELFIN (embedded-metal-layer process for fully integrated NOR) is proposed for the 16/64 Mbit flash EEPROM. The ELFIN cell introduces the selfaligned metal drain-pad and source-line technology. It is demonstrated in a 3.0 μm2 cell using the 0.6 μm design rule, i.e. a 25% reduction in cell size is attained compared with the conventional NOR-type cell with the same design rule. Excellent electrical characteristics of programming, erasing and endurance are achieved
Keywords :
CMOS integrated circuits; EPROM; integrated memory circuits; 0.6 micron; 16 Mbit; 64 Mbit; ELFIN cell; electrical characteristics; embedded-metal-layer process; flash EEPROM; fully integrated NOR cell; selfaligned metal drain-pad; source-line technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940843
