DocumentCode :
1150239
Title :
X-ray diffraction studies of high-quality GaN heteroepitaxial films grown by metal organic chemical vapour deposition
Author :
Holmes, Archie L. ; Ciuba, F.J. ; Dupuis, Russell
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
Volume :
30
Issue :
15
fYear :
1994
fDate :
7/21/1994 12:00:00 AM
Firstpage :
1252
Lastpage :
1254
Abstract :
The authors report the growth and characterisation of high-quality GaN films grown on (0001)-oriented sapphire (Al2O3) substrates by metal organic chemical vapour deposition (MOCVD). These films were analysed using five-crystal X-ray diffraction, optical transmission spectroscopy, transmission electron microscopy (TEM) and cathodoluminescence. The X-ray diffraction FWHM value of ΔΘ≃37 s-1 is the narrowest reported to date. The dependence of FWHM on epilayer thickness exhibits the classical behaviour commonly observed in more conventional III-V materials and implies an extinction depth much smaller than that which might be inferred from the X-ray diffraction data previously published by other researchers. The first reported observation of Pendellosung fringes in the III-V nitride material system is also presented
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; cathodoluminescence; gallium compounds; luminescence of inorganic solids; semiconductor epitaxial layers; semiconductor growth; transmission electron microscope examination of materials; vapour phase epitaxial growth; visible spectra of inorganic solids; (0001)-oriented sapphire substrates; Al2O3; FWHM; GaN; GaN heteroepitaxial films; III-V nitride material; Pendellosung fringes; cathodoluminescence; epilayer thickness; extinction depth; five-crystal X-ray diffraction; growth; metal organic chemical vapour deposition; optical transmission spectroscopy; transmission electron microscopy;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940820
Filename :
311918
Link To Document :
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