Long-wavelength multiple-quantum-well voltage-controlled bistable laser diodes

We have investigated static and dynamic characteristics of a multiple-quantum-well (MQW) voltage-controlled bistable laser diode at 1.5 μm. Using the quantum confined Stark effect, the absorption coefficient and the absorption band edge of the saturable absorption region are controlled by applied voltage, resulting in easy change of the hysteresis width and the threshold current. Applied voltage from below the current injection regime to the saturable absorption region, typically the reverse bias voltage, allows faster turn-off switching speed due to the carrier sweep-out by the applied electric field, MQW bistable lasers with InGaAs-InP, InGaAs-InGaAsP and InGaAs-InAlAs systems and several kinds of well numbers were fabricated and their threshold current and switching characteristics are compared. A hysteresis width change of about 20 mA was obtained by changing the applied voltage of about 1 V in each case, Less than 100 ps turn-on switching time with injection light of 1-mW peak intensity was obtained. The device can be switched-on by injection light with about 50 nm bandwidth, and the minimum input light switching intensity of less than 10 μW is achieved around the absorption peak wavelength of the saturable absorber. The InGaAs-InAIAs system has the advantage of low voltage bias at the saturable absorber, because the absorption edge is sharper than other materials due to its high conduction band offset. It has a turn-off switching time of less than 100 ps at the applied voltage height of 2.0 V. And also, memory operation with the repetition rate of 2 GHz has been achieved using input light and the applied voltage