Title :
Possibility of X-ray detection using quantum wells
Author_Institution :
Res. Lab. of Electron., MIT, Cambridge, MA, USA
fDate :
9/1/1991 12:00:00 AM
Abstract :
The author presents simple designs of quantum-well-based detectors which can be easily fabricated and which can detect a flux of X-rays incident on the detector. The author calculates the X-ray induced change in absorption and refractive index in GaAs-based quantum wells and uses that information to predict the performance of several proposed X-ray detectors based on carrier induced change in optical susceptibility in semiconductor quantum well structures following X-ray absorption. A 1% change in the probe beam in a reflection geometry is calculated for an incident flux of 12 X-ray photons per μm2
Keywords :
III-V semiconductors; X-ray detection and measurement; gallium arsenide; semiconductor counters; semiconductor quantum wells; GaAs; III-V semiconductor; X-ray absorption; X-ray detection; carrier induced change; incident flux; optical susceptibility; probe beam; quantum-well-based detectors; reflection geometry; refractive index; semiconductor quantum well structures; Electromagnetic wave absorption; Geometrical optics; Optical reflection; Optical refraction; Optical variables control; Probes; Quantum wells; Refractive index; X-ray detection; X-ray detectors;
Journal_Title :
Quantum Electronics, IEEE Journal of
