Title :
Highly reliable 1.55 μm GaInAsP laser diodes buried with semi-insulating iron-doped InP
Author :
Matsumoto, Shinichi ; Fukuda, Motohisa ; Sato, Kiminori ; Itaya, Y. ; Yamamoto, Manabu
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
8/4/1994 12:00:00 AM
Abstract :
Highly reliable 1.55 μm GaInAsP/InP laser diodes buried with semi-insulating iron-doped InP are presented that operate stably for more than 5000 h with a degradation ratio of less than 5×10-6 /h. The lifetime at 50°C is estimated to be more than 105 h
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; iron; laser frequency stability; reliability; semiconductor lasers; 1.55 micron; 50 degC; 5000 h; GaInAsP-InP:Fe; GaInAsP/InP:Fe; degradation ratio; laser diodes; laser lifetime; long-term stability; reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940889
