Two-dimensional tensor temperature extension of the hydrodynamic model and its applications

Author

Pejcinovic, Branimir ; Tang, Henry H K ; Egley, James L. ; Logan, L.R. ; Srinivasan, G.R.

Author_Institution

Dept. of Electr. Eng., Portland State Univ., OR, USA

Volume

42

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2147

Lastpage

2155

Abstract

The fundamental assumption that is made in most hydrodynamic simulation programs is the scalar nature of the temperature. In this paper we examine this assumption and present a model that takes into account the full tensorial nature of the temperature. The results show good agreement with 1-D Monte Carlo calculations for a ballistic diode and reproduce some of the qualitative features of 2-D Monte Carlo results for MOSFETs. In terms of terminal currents, 2-D tensor temperature simulation of BJTs shows only small differences when compared with results from scalar temperature formulation. For MOSFETs the differences are up to 15%. Internal distribution of temperature in MOSFETs shows some interesting properties that cannot be reproduced by the scalar temperature hydrodynamic model. The details of the physical models and transport coefficients used are also described

Keywords

MOSFET; bipolar transistors; electronic engineering computing; semiconductor device models; semiconductor diodes; temperature distribution; 2D tensor temperature extension; BJT; MOSFET; ballistic diode; hydrodynamic model; hydrodynamic simulation program; internal distribution; physical models; transport coefficients; Boltzmann equation; Differential equations; Diodes; Hydrodynamics; Laboratories; MOSFET circuits; MOSFETs; Monte Carlo methods; Research and development; Temperature distribution; Tensile stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477773

Filename

477773