DocumentCode
1151806
Title
Arbitrary lateral diffusion profiles
Author
Merchant, Steve
Author_Institution
Philips Lab., Philips Electron. North America Corp., Briarcliff Manor, NY, USA
Volume
42
Issue
12
fYear
1995
fDate
12/1/1995 12:00:00 AM
Firstpage
2226
Lastpage
2230
Abstract
A simple theory underlying the formation of lateral doping profiles in semiconductor device processing is presented for the first time. The theory shows how an arbitrary lateral doping profile can, in principle, be fabricated by ion implantation and diffusion. Practical applications of the theory are limited only by photolithography and diffusion time. The mask layout and diffusion parameters for a linear lateral profile and a square root lateral profile are detailed
Keywords
diffusion; doping profiles; ion implantation; semiconductor process modelling; diffusion; ion implantation; lateral doping profiles; mask; photolithography; semiconductor device processing; Annealing; Doping profiles; Fabrication; Helium; Ion implantation; Lithography; Semiconductor devices; Semiconductor impurities; Shape control; Silicon on insulator technology; Termination of employment;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.477783
Filename
477783
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