Electron trapping, nitride conduction, and forward gain instability in a lateral p-n-p device

Author

Hook, Terence B. ; Johnson, Mark E. ; Ferris-Prabhu, Albert V.

Author_Institution

IBM Gen. Technol. Div., Essex Junction, VT, USA

Volume

37

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

755

Lastpage

761

Abstract

The increase in the forward gain of a lateral p-n-p device under forward-bias stress conditions is discussed. The phenomenon has been characterized as a function of collector-base voltage, emitter current, and stress temperature. The results are interpreted as electron trapping at the interface between the passivation oxide and a silicon nitride overlayer. The trapping behavior is further modified by the finite conductivity of the silicon nitride. A quasi-empirical model for the effect incorporating the hot-electron injection and the nitride conduction has been developed

Keywords

bipolar transistors; electron traps; hot carriers; semiconductor device models; Si-SiO₂-Si₃N₄; collector-base voltage; electron trapping; emitter current; forward gain instability; forward-bias stress conditions; hot-electron injection; lateral p-n-p device; nitride conduction; passivation oxide; quasi-empirical model; stress temperature; Conductivity; Dielectric devices; Electron traps; FETs; Passivation; Secondary generated hot electron injection; Silicon; Stress; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.47782

Filename

47782