• DocumentCode
    1153565
  • Title

    High-Power Single-Mode 1.3- \\mu m InGaAsP–InGaAsP Multiple-Quantum-Well Laser Diodes With Wide Apertures

  • Author

    Kim, Kyoung Chan ; Jang, Dong-Kie ; Lee, Jung Il ; Kim, Tae Geun ; Lee, Woo Won ; Kim, Jeong Ho ; Yang, Eun Jeong ; Koo, Bon Jo ; Han, Il Ki

  • Volume
    21
  • Issue
    19
  • fYear
    2009
  • Firstpage
    1438
  • Lastpage
    1440
  • Abstract
    A wide-aperture ridge waveguide structure was applied to 1.3-mum InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A were achieved from a single facet of the LD with a 7-mum-wide ridge top and a 1.5-mm-long uncoated cavity.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; quantum well lasers; ridge waveguides; waveguide lasers; InGaAsP-InGaAsP; high-power multiple-quantum-well laser diode; kink-free output power; power 140 mW; single-lateral-mode operation; uncoated laser cavity; wavelength 1.3 mum; wide-aperture ridge waveguide structure; High-power; multiple quantum well (MQW); single-mode laser diodes (LDs); wide aperture;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2028153
  • Filename
    5175483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1153565