Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire

Author

Ling, Shih-Chun ; Wang, Te-Chung ; Chen, Jun-Rong ; Liu, Po-Chun ; Ko, Tsung-Shine ; Chang, Bao-Yao ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung ; Tsay, Jenq-Dar

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

21

Issue

16

fYear

2009

Firstpage

1130

Lastpage

1132

Abstract

In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Omega as 20-mA injected current. Furthermore, the output power was 240 muW at 100-mA drive current.

Keywords

III-V semiconductors; electrical resistivity; electroluminescence; gallium compounds; indium compounds; light emitting diodes; light polarisation; spectral line shift; wide band gap semiconductors; Al₂O₃; InGaN-GaN; a-plane green LEDs; a-plane green light-emitting diodes; band-filling effect; current 100 mA; current 20 mA; current-voltage curve; differential series resistance; electroluminescence spectra; emission polarization anisotropy; power 240 muW; r-plane sapphire; wavelength blue-shift; Anisotropic magnetoresistance; Electroluminescence; Epitaxial growth; Gallium nitride; Industrial electronics; Light emitting diodes; Optical polarization; Piezoelectric polarization; Spontaneous emission; Substrates; A-plane GaN; electroluminescence (EL); green light-emitting diodes (LEDs); polarization degree;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2023234

Filename

5175501