Title :
Electrical test structure for measuring polysilicon-to-active mask misalignment
Author_Institution :
Simon Fraser Univ., Sch. of Eng. Sci., Bumaby, BC, Canada
fDate :
7/5/1990 12:00:00 AM
Abstract :
An electrical test structure which allows accurate measurement of the misalignment vector between polysilicon and active region patterns in MOS technology is described. Due to its small size and simplicity, the structure can be useful for misalignment mapping and for statistical characterisation of polysilicon photolithography processes.
Keywords :
MOS integrated circuits; VLSI; displacement measurement; integrated circuit technology; lithography; masks; IC technology; MOS technology; VLSI; electrical test structure; mask misalignment measurement; misalignment mapping; misalignment vector; operation; polysilicon photolithography processes; polysilicon-to-active mask misalignment; statistical characterisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900654
