DocumentCode
1154571
Title
The effects of electron-hole Coulomb interaction in semiconductor lasers
Author
Chow, Weng W. ; Koch, Stephan W. ; Sargent, Murray, III
Author_Institution
Sandia Nat. Lab., Albuquerque, NM, USA
Volume
26
Issue
6
fYear
1990
fDate
6/1/1990 12:00:00 AM
Firstpage
1052
Lastpage
1057
Abstract
A recent many-body theory is applied to investigate the corrections to semiconductor laser gain and carrier-induced refractive index. The results show nonnegligible modifications to these quantities and demonstrate the importance of band-gap renormalization and Coulomb enhancement. The many-body Coulomb corrections also result in a different prediction of filamentation effects in semiconductor lasers
Keywords
electron-hole recombination; laser theory; many-body problems; refractive index; semiconductor junction lasers; Coulomb enhancement; band-gap renormalization; carrier-induced refractive index; electron-hole Coulomb interaction; filamentation effects; many-body Coulomb corrections; many-body theory; semiconductor laser gain; semiconductor lasers; Equations; Laboratories; Laser modes; Laser theory; Laser transitions; Optical refraction; Optical saturation; Optical variables control; Refractive index; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.108100
Filename
108100
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