Theory of high gain transient energy transfer in GaAs and Si

Author

Valley, George C. ; Dubard, J. ; Smirl, Arthur L.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

Volume

26

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

1058

Lastpage

1066

Abstract

Rate equations for carrier number densities and wave equations for optical fields are solved numerically to investigate transient energy transfer (TET) from a strong pump beam to a weak probe via the free-carrier nonlinearity in GaAs and Si. The calculations of TET include arbitrary ratio of pulse length to diffusion time, pump depletion, free-carrier absorption, and two-photon absorption. The calculations provide guidance on the optimal choice of sample thickness, free-carrier cross section, and two-photon absorption coefficient for obtaining high TET gains in semiconductors

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; laser theory; light absorption; nonlinear optics; optical pumping; semiconductor junction lasers; silicon; GaAs; Si; absorption coefficient; carrier number densities; diffusion time; free-carrier absorption; free-carrier cross section; free-carrier nonlinearity; high gain transient energy transfer; optical fields; pulse length; pump depletion; sample thickness; semiconductor laser gain theory; strong pump beam; two-photon absorption; wave equations; weak probe; Absorption; Energy exchange; Gallium arsenide; Gratings; Laser excitation; Nonlinear optics; Optical pulses; Optical pumping; Optical saturation; Probes;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.108101

Filename

108101