Title :
Design and implementation of an embedded 512-KB level-2 cache subsystem
Author :
Shin, Jinuk Luke ; Petrick, Bruce ; Singh, Mandeep ; Leon, Ana Sonia
Author_Institution :
Sun Microsystems Inc., Sunnyvale, CA, USA
Abstract :
Dual on-chip 512-KB unified second level (L2) caches for an UltraSparc processor are implemented using 0.13-μm technology. Each 512-KB unit is implemented using 34 million transistors to achieve 1.4 GHz and 2.6 W at 1.3 V and 85°C. This fully integrated subsystem is composed of conventional data and tag SRAMs along with datapaths, controller, and test engines. The unit achieves one of the shortest on-chip L2 cache latencies reported for 64-bit microprocessors, with a data latency of only four cycles including ECC correction for 128-bit data. In addition, balanced custom and automated design methodologies are used to achieve the aggressive design cycle. Architectural and physical design solutions to build this integrated short latency L2 cache are discussed.
Keywords :
SRAM chips; cache storage; microprocessor chips; 0.13 micron; 1.3 V; 1.4 GHz; 2.6 W; 512 KB; 85 C; ECC correction; SRAM; UltraSparc processor; automated design; cache latency; coupling noise; current-mode sense amplifier; custom design; data latency; deep-submicron CMOS technology; integrated subsystem; microprocessors; second level caches; CMOS technology; Clocks; Delay; Design methodology; Frequency; Logic; Microprocessors; Random access memory; Silicon; Testing; Coupling noise; ECC; SRAM; UltraSPARC; current-mode sense amplifier; deep-submicron CMOS technology; microprocessor; on-chip L2 cache;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2005.852165
