Design study of AlGaAs/GaAs HBTs

Author

Gao, Guang-bo ; Roulston, David J. ; Morkoç, Hadis

Author_Institution

Dept. of Electr. Eng., Waterloo Univ., Ont., Canada

Volume

37

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

1199

Lastpage

1208

Abstract

The frequency performance of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) having different layouts, doping profiles, and layer thicknesses was assessed using the BIPOLE computer program. The optimized design of HBTs was studied, and the high current performances of HBTs and polysilicon emitter transistors were compared. It is shown that no current crowding effect occurs at current densities less than 1×10⁵ A/cm² for the HBT with emitter stripe width S_E<3 μm, and the HBT current-handling capability determined by the peak current-gain cutoff frequency is more than twice as large as that of the polysilicon emitter transistor. An optimized maximum oscillation frequency formula has been obtained for a typical process n-p-n AlGaAs/GaAs HBT having base doping of 1×10 ¹⁹ cm^-3

Keywords

III-V semiconductors; aluminium compounds; electronic engineering computing; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; AlGaAs-GaAs; BIPOLE computer program; HBTs; current crowding effect; current-handling capability; design optimization; frequency performance; heterojunction bipolar transistors; high current performances; maximum oscillation frequency; peak current-gain cutoff frequency; Doping profiles; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High performance computing; Laboratories; Microwave transistors; Numerical simulation; Photonic band gap; Proximity effect;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.108180

Filename

108180