An analysis of positive and negative resistance characteristics in the high-current-density region of Schottky diodes

Author

Yamamoto, Yousuke ; Miyanaga, Hiroshi

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

37

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

1364

Lastpage

1372

Abstract

A number of different diode characteristics are observed in small-area silicon Schottky diodes under forward-biased and high-current-density conditions. These characteristics, such as positive resistance, negative resistance, and normal diode characteristics, are analyzed. The analysis demonstrates that the variations are due to the minority-carrier accumulation in the epitaxial region of the diodes, which is mainly controlled by Schottky barrier heights and the resistivity of the semiconductor epitaxial region

Keywords

Schottky-barrier diodes; carrier lifetime; equivalent circuits; minority carriers; negative resistance; I-V characteristics; Schottky barrier heights; Schottky diodes; Si; epitaxial region; equivalent circuit; forward biased condition; high-current-density region; minority-carrier accumulation; negative resistance characteristics; positive resistance; Bipolar transistors; Clamps; Conductivity; Electrodes; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.108199

Filename

108199