DocumentCode :
1156576
Title :
Development of an end-point detector for parylene deposition process
Author :
Sutomo, Wongso ; Wang, Xuefeng ; Bullen, David ; Braden, Sarah K. ; Liu, Chang
Author_Institution :
Nanotechnology Lab., Univ. of Illinois, Champaign, IL, USA
Volume :
12
Issue :
1
fYear :
2003
fDate :
2/1/2003 12:00:00 AM
Firstpage :
64
Lastpage :
69
Abstract :
Parylene is an emerging material for MEMS. It is an organic material that is grown by using the chemical vapor deposition method at room temperature. The deposition thickness is commonly controlled by the amount of solid-phase dimer loaded in a sublimation chamber. In a conventional deposition machine, the end point of the process is designated by the moment the dimer is exhausted. However, this end-of-process criterion does not offer precise, repeatable control of film thickness. We present the results of the development of an in situ end-point detector for a Parylene chemical vapor deposition process. The detector is based on the thermal transfer principle and can be implemented on commercial parylene deposition systems with minimal system modification. Such a sensor enables a user to stop the deposition when a targeted thickness is reached. The end point detector is very simple to implement on existing parylene deposition systems. A series of such sensors with different target deposition thickness would allow extraction of the actual deposition rate within a deposition run.
Keywords :
chemical vapour deposition; micromechanical devices; polymer films; sublimation; MEMS; chemical vapor deposition method; deposition thickness; end-point detector; organic material; parylene; solid-phase dimer; sublimation chamber; thermal transfer principle; Chemical sensors; Chemical vapor deposition; Control systems; Detectors; Dielectric materials; Laboratories; Micromechanical devices; Semiconductor materials; Temperature; Thickness control;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2002.807473
Filename :
1183743
Link To Document :
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