Title :
Rapid-thermal annealing for quantum-well heterostructure device fabrication
Author :
Myers, David R. ; Vawter, G. Allen ; Jones, Eric D. ; Zipperian, Thomas E. ; Drummond, Timothy J. ; Fritz, I.J. ; Dawson, L. Ralph ; Brennan, T.M. ; Hammons, B.E. ; Datye, Abhaya K. ; Simons, David S. ; Comas, James
Author_Institution :
Sandia Nat. Lab.. Albuquerque, NM, USA
fDate :
1/1/1992 12:00:00 AM
Abstract :
The authors examine ion implantation and rapid-thermal processing for the fabrication of quantum-well, compound-semiconductor heterostructure devices in strained and in lattice-matched material systems. The authors demonstrate improvements to the performance of two classes of devices that would be particularly sensitive to process-induced defects: p-channel strained-quantum-well field-effect transistors and single-quantum-well diode lasers. The authors correlated the device results with secondary-ion mass spectroscopy, Hall-effect, transmission-electron microscopy, and photoluminescence
Keywords :
Hall effect; gradient index optics; high electron mobility transistors; incoherent light annealing; ion implantation; optical workshop techniques; photoluminescence; secondary ion mass spectra; semiconductor device testing; semiconductor junction lasers; transmission electron microscopy; BH-GRINSCH laser; Hall-effect; MODFET; ion implantation; lattice-matched material systems; p-channel strained-quantum-well field-effect transistors; photoluminescence; process-induced defects; quantum-well heterostructure device fabrication; rapid-thermal processing; secondary-ion mass spectroscopy; single-quantum-well diode lasers; strained lattice systems; transmission-electron microscopy; Annealing; Diode lasers; FETs; Ion implantation; Mass spectroscopy; Microscopy; Optical device fabrication; Optical materials; Quantum well devices; Quantum well lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
