• DocumentCode
    1157592
  • Title

    Monolithically integrated avalanche photodiode and transimpedance amplifier in a hybrid bulk/SOI CMOS process

  • Author

    Moloney, A.M. ; Morrison, A.P. ; Jackson, J.C. ; Mathewson, A. ; Alderman, J. ; Donnelly, J. ; O´Neill, B. ; Kelleher, A.M. ; Healy, G. ; Murphy, P.J.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. Coll. Cork, Ireland
  • Volume
    39
  • Issue
    4
  • fYear
    2003
  • fDate
    2/20/2003 12:00:00 AM
  • Firstpage
    391
  • Lastpage
    392
  • Abstract
    A novel monolithically integrated silicon-on-insulator (SOI) CMOS avalanche photodiode photoreceiver is presented. The photoreceiver consists of a high gain (>30), low voltage (<20 V) Geiger-mode avalanche photodiode, operated below breakdown in avalanche mode, monolithically integrated with a transimpedance amplifier (TZ) in a 1.5 μm hybrid bulk/SOI CMOS process.
  • Keywords
    CMOS integrated circuits; low-power electronics; optical fibre communication; optical interconnections; optical receivers; silicon-on-insulator; 0 to 20 V; 1.5 micron; Geiger-mode avalanche photodiode; Si; hybrid bulk/SOI CMOS process; low voltage device; optical interconnects; photoreceiver; short-haul plastic optical fibre communication systems; transimpedance amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030187
  • Filename
    1184087
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1157592