DocumentCode :
1157796
Title :
A coherent extension of the transport equations in semiconductors incorporating the quantum correction-part I: single-particle dynamics
Author :
Rudan, Massimo ; Gnani, Elena ; Reggiani, Susanna ; Baccarani, Giorgio
Author_Institution :
Dept. of Electron., Univ. of Bologna, Italy
Volume :
4
Issue :
5
fYear :
2005
Firstpage :
495
Lastpage :
502
Abstract :
The aim of the investigation is to consistently incorporate quantum corrections in the transport model for applications to nanoscale semiconductor devices. This paper is comprised of two parts. Part I derives a set of two semiclassical equations in which the dynamics of the dispersion of the single-particle wave function is accounted for in addition to that of the expectation value of position. The model is founded on an approximate description of the wave function that eliminates the need of the Ehrenfest approximation. This leads to a set of two Newton-like single-particle equations for position and dispersion. In Part II, it will be shown that the Lagrangian form of the single-particle equations naturally lends itself to the incorporation of such extended dynamics into the statistical framework. The theory is suitable for different levels of applications: description of the single-particle ballistic dynamics, solution of the generalized Boltzmann equation by the Monte Carlo method or other methods, and solution of the continuity equations in the position-dispersion space.
Keywords :
carrier density; nanoelectronics; semiconductor device models; wave functions; Ehrenfest approximation; Lagrangian single-particle equations; Monte Carlo method; Newton-like single-particle equations; carrier concentration; continuity equations; generalized Boltzmann equation; nanoscale semiconductor devices; position expectation value; position-dispersion space; quantum correction; semiclassical equations; single-particle ballistic dynamics; single-particle wave function; transport equations; Acoustic scattering; Boltzmann equation; Differential equations; Effective mass; Electric potential; Lagrangian functions; Nanoscale devices; Particle scattering; Semiconductor devices; Wave functions; Nanoscale devices; quantum corrections; semiconductors; transport;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2005.851415
Filename :
1504704
Link To Document :
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