Title :
HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation
Author :
Miura-Mattausch, Mitiko ; Sadachika, Norio ; Navarro, Dondee ; Suzuki, Gaku ; Takeda, Youichi ; Miyake, Masataka ; Warabino, Tomoyuki ; Mizukane, Yoshio ; Inagaki, Ryosuke ; Ezaki, Tatsuya ; Mattausch, Hans Jürgen ; Ohguro, Tatsuya ; Iizuka, Takahiro ; Ta
Author_Institution :
Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ.
Abstract :
The compact MOSFET model development trend leads to models based on the channel surface potential, allowing higher accuracy and a reduced number of model parameters. Among these, the Hiroshima University Semiconductor Technology Academic Research Center IGFET Model (HiSIM) solves the surface potentials with an efficient physically correct iteration procedure, thus avoiding additional approximations without any computer run-time penalty. It is further demonstrated that excellent model accuracy for higher-order phenomena, which is a prerequisite for accurate RF circuit simulation, is achieved by HiSIM without any new model parameters in addition to those for describing the current-voltage characteristics
Keywords :
MOSFET; circuit simulation; iterative methods; semiconductor device models; surface potential; HiSIM2; RF circuit simulation; advanced MOSFET model; compact model; current-voltage characteristics; device physics; higher-order phenomena; iteration procedure; model parameters; surface potential; Associate members; Circuit simulation; Lead compounds; MOSFET circuits; Microscopy; Physics computing; Poisson equations; Predictive models; Radio frequency; Runtime; Compact MOSFET model; RF features; device physics; iterative solution; surface potentials;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.880374
