Title :
Thickness dependence of Weibull slopes of HfO2 gate dielectrics
Author :
Hee Kim, Young ; Onishi, Katsunori ; Seok Kang, Chang ; Cho, Hag-Ju ; Choi, Rino ; Krishnan, Siddarth ; Akbar, M.S. ; Lee, Jack C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Abstract :
Breakdown voltage distribution, Weibull slopes, and area scaling factors have been investigated for HfO/sub 2/ gate dielectrics in order to gain a better understanding of the breakdown mechanism. Weibull slope of thick HfO/sub 2/ (e.g., /spl beta//spl ap/4 for EOT=2.5 nm) is smaller than that of SiO/sub 2/ with similar physical thickness, whereas /spl beta/ of the thinner HfO/sub 2/ (e.g., /spl beta//spl ap/2 for EOT=1.4 nm) is similar to that of SiO/sub 2/. The implication of the thickness dependence of /spl beta/ is discussed.
Keywords :
MOS capacitors; MOSFET; dielectric thin films; hafnium compounds; semiconductor device breakdown; semiconductor device reliability; voltage distribution; 1.4 nm; 2.5 nm; HfO/sub 2/; HfO/sub 2/ gate dielectrics; MOS capacitor; TDDB; Weibull slopes; area scaling factors; breakdown mechanism; breakdown voltage distribution; reliability; thickness dependence; Breakdown voltage; Dielectric breakdown; Electric breakdown; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Lifting equipment; MOS capacitors; Stress;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.807314
