• DocumentCode
    1160105
  • Title

    High-Performance \\hbox {SrTiO}_{3} MIM Capacitors for Analog Applications

  • Author

    Chiang, K.C. ; Huang, Ching-Chien ; Chen, G.L. ; Chen, Wen Jauh ; Kao, H.L. ; Wu, Yung-Hsien ; Chin, Albert ; McAlister, Sean P.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
  • Volume
    53
  • Issue
    9
  • fYear
    2006
  • Firstpage
    2312
  • Lastpage
    2319
  • Abstract
    TaN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/mum2 have been developed by using a high-kappa (kappa=147-169) SrTiO3 dielectric containing nanometer-sized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V2) voltage coefficient of the capacitance and the 3times10-8 A/cm2 leakage current at 2 V exceed the International Technology Roadmap for Semiconductors´ requirements for analog capacitors at year 2018
  • Keywords
    MIM devices; analogue circuits; annealing; high-k dielectric thin films; nanotechnology; thin film capacitors; MIM capacitors; TaN-SrTiO3-TaN; analog applications; analog capacitors; high-K dielectric; metal-insulator-metal; nanometer-sized microcrystals; post-deposition annealing; Annealing; Capacitance; Costs; Degradation; Dielectrics; Electrodes; Leakage current; MIM capacitors; Plasma temperature; Voltage; Capacitor; International Technology Roadmap for Semiconductors (ITRS); metal–insulator–metal (MIM);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2006.881013
  • Filename
    1677869
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1160105