Synaptic Behaviors Mimicked in Flexible Oxide-Based Transistors on Plastic Substrates

Author

Jumei Zhou ; Changjin Wan ; Liqiang Zhu ; Yi Shi ; Qing Wan

Author_Institution

Sch. of Electron. Sci. & Eng., Nanjing Univ., Nanjing, China

Volume

34

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

1433

Lastpage

1435

Abstract

In the human brain, synapses are the crucial connective parts between neurons, which endow neurons with significant computational abilities. Here, indium-zinc-oxide (IZO) based flexible synaptic transistors are fabricated on a plastic substrate by a simple self-assembly method. Proton conducting phosphorus-doped nanogranular SiO₂ electrolyte is used as the gate dielectric. Excitatory postsynaptic current, paired-pulse facilitation, and long-term memory are mimicked in the flexible artificial synapses. Such IZO-based flexible electronic synapses are promising for building neuromorphic systems.

Keywords

bioelectric potentials; brain; electrolytes; field effect transistors; flexible electronics; indium compounds; nanostructured materials; neurophysiology; phosphorus; self-assembly; silicon compounds; zinc compounds; InZnO; SiO₂:P; artificial synapses; excitatory postsynaptic current; flexible oxide-based transistors; gate dielectric; indium-zinc-oxide based flexible synaptic transistors; long-term memory; neuromorphic systems; paired-pulse facilitation; plastic substrates; proton conducting phosphorus-doped nanogranular SiO₂ electrolyte; self-assembly; synaptic behaviors; Electrodes; Logic gates; Nanobioscience; Neurons; Protons; Substrates; Transistors; Flexible synaptic transistors; nanogranular ${rm SiO}_{2}$ electrolyte; paired-pulse facilitation (PPF);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2280663

Filename

6600998