Title :
Simulation of dry etch processes by COMPOSITE
Author :
Pelka, Joachim ; Müller, K.P. ; Mader, Hermann
Author_Institution :
Fraunhofer-Inst. fuer Mikrostrukturtech., Berlin, West Germany
fDate :
2/1/1988 12:00:00 AM
Abstract :
Anetch simulator that allows modeling of dry etch processes by means of rates, fitting functions, and models is presented. Isotropic etching by chemically active neutrals, sputtering by energetic ions, and anisotropic etching by ion-induced chemistry can be considered. The simulation of secondary effects such as redeposition and trenching as well as polymerization effects is possible. Some applications are presented to demonstrate the possibilities of the new program. This etch simulator is part of the process modeling program COMPOSITE, which is able to simulate the complete fabrication process of integrated circuits
Keywords :
electronic engineering computing; integrated circuit technology; semiconductor technology; sputter etching; COMPOSITE; IC fabrication; anisotropic etching; chemically active neutrals; dry etch processes; energetic ions; etch simulator; ion-induced chemistry; isotropic etching; modeling; polymerization effects; process modeling program; redeposition; secondary effects; sputtering; trenching; Anisotropic magnetoresistance; Chemicals; Chemistry; Circuit simulation; Dry etching; Fabrication; Integrated circuit modeling; Polymers; Sputter etching; Sputtering;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
