مرکز منطقه ای اطلاع رساني علوم و فناوري - A Gain-Bandwidth Limitation for Parametric Amplifiers with n-Varactor Diodes

DocumentCode :

1161534

Title :

A Gain-Bandwidth Limitation for Parametric Amplifiers with n-Varactor Diodes

Author :

Ku, Walter H.

Volume :

Issue :

fYear :

1966

fDate :

3/1/1966 12:00:00 AM

Firstpage :

Lastpage :

Abstract :

A gain-bandwidth limitation is derived in this paper for parametric amplifiers incorporating an arbitrary number of varactor diodes. For $n$ varactors with parameters $C_{0\\tau }$ , and $C_{1\\tau },\\tau = 1,2,\\cdots ,n$ , the optimum gain-bandwidth limitation is given by $(G_{T})_{n}\\leq \\cosh ^{2}[frac{\\pi\\sqrt {\\omega _{s0}\\omega _{i0}}} {\\omega _0} Sum_{r=1}^{n} frac {C_{1\\tau }} {C_{0\\tau }}]$ , where $(G_{T})_{n}$ - is the maximum flat transducer power gain, $\\omega _{c}$ is the equivalent low-pass bandwidth, and $\\omega _{s0}$ and $\\omega _{i0}$ are the signal and idler band-center frequencies, respectively. This result is based on the three-frequency model for the varactor device and is essentially a generalization of the gain-bandwidth limitation for single-varactor parametric amplifiers published recently by the author [2].