Title :
Cryogenic RF switch using III-nitride MOSHFETs
Author :
Simin, G. ; Koudymov, Alexey ; Yang, Zengli ; Hu, Xiaonan ; Yang, Jian ; Shur, M. ; Gaska, R.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC
Abstract :
The cryogenic operation of a low-loss RF switch using a AlGaN/GaN metal-oxide semiconductor heterostructure field effect transistor is reported. At 77 K the channel resistance of the MOSHFET is three times lower and the contact resistance is 20% lower compared to room temperature. As a result, the performance of the MOSHFET RF switch at 77 K is even superior to that at room temperature.
Keywords :
III-V semiconductors; cryogenic electronics; electric resistance; field effect transistor switches; microwave switches; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; MOSHFET; channel resistance; cryogenic RF switch; low-loss RF switch; metal-oxide semiconductor heterostructure field effect transistor; temperature 77 K;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20092562
