DocumentCode
1161813
Title
The efficient simulation of coupled point defect and impurity diffusion
Author
Kump, Michael R. ; Dutton, Robert W.
Author_Institution
Technol. Modeling Associates, Palo Alto, CA, USA
Volume
7
Issue
2
fYear
1988
fDate
2/1/1988 12:00:00 AM
Firstpage
191
Lastpage
204
Abstract
A program has been developed which efficiently solves the coupled diffusion of interstitials, vacancies, and multiple impurity species in two dimensions. Due to the vast differences in diffusivities of the point defects and impurities, two separate spatial grids are used. A coarse grid is sufficient to represent the rapidly diffusing point defects, whereas a much finer grid is necessary to resolve the details of the impurity profile. Independent time steps are automatically selected for each species, permitting this extremely stiff system of diffusion equations to be solved in acceptable CPU time on a minicomputer. The simulation results are used to study the coupled diffusion of point defects and impurities under local oxidation conditions. Comparison with lap and stain measurements on structures with various widths of oxidizing and nitride-masked regions allows accurate values for numerous point defect diffusion parameters to be extracted
Keywords
diffusion in solids; electronic engineering computing; impurity-defect interactions; interstitials; oxidation; semiconductor technology; vacancies (crystal); 2D diffusion; coupled diffusion; impurity diffusion; impurity profile; interstitials; local oxidation conditions; multiple impurity species; nitride-masked regions; program; semiconductor technology; simulation; spatial grids; vacancies; Computational modeling; Contracts; Delay; Equations; Impurities; Ion implantation; Microcomputers; Oxidation; Semiconductor impurities; Silicon; Spatial resolution; Stacking;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.3149
Filename
3149
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