Hybrid optical vector modulator utilising AlGaInAs reflective EAMs and high index-contrast silica circuit

Author

Dupuis, N. ; Kazmierski, C. ; Decobert, Jean ; Alexandre, F. ; Jany, C. ; Garreau, A. ; Landreau, Jean ; Rasras, Mahmoud S. ; Cappuzzo, Mark ; Gomez, L.T. ; Chen, Y.F. ; Earnshaw, M.P. ; Lee, Jeyull ; Leven, Andreas ; Kang, I. ; Chandrasekhar, S. ; Buhl,

Author_Institution

Alcatel-Thales III-V Lab., Bell, CA

Volume

45

Issue

4

fYear

2009

Firstpage

222

Lastpage

224

Abstract

A new compact photonic-integrated modulator utilising a four-element reflective electro-absorption modulator-semiconductor optical amplifier (EAM-SOA) array and silica interferometric guide arrangement is presented. The EAM-SOA active layer consists of AlGaInAs quantum wells designed in selective area growth technology, which enables an insertion gain, and the mature silica platform provides reduced optical losses. As a result, error-free 50 Gbit/s RZ-QPSK signal generation is shown.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; quadrature phase shift keying; semiconductor optical amplifiers; semiconductor quantum wells; silicon compounds; AlGaInAs; RZ-QPSK signal generation; electro absorption modulator; four element reflective; high index contrast; hybrid optical vector modulator; photonic integrated modulator; quantum wells; reflective EAM; selective area growth technology; semiconductor optical amplifier; silica circuit;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20093468

Filename

4784320