Title :
Nonstationary carrier dynamics in quarter-micron Si MOSFETs
Author :
Tomizawa, Masaaki ; Yokoyama, Kiyoyuki ; Yoshi, Akira
Author_Institution :
LSI Labs., NTT, Kanagawa, Japan
fDate :
2/1/1988 12:00:00 AM
Abstract :
An application of Monte Carlo particle and relaxation time approximation modeling to quarter-micron Si MOSFETs is presented. Through a comparison between these two nonstatic models and a conventional model, nonstationary carrier transport is shown to dominate in 0.4 μm or less channel devices, with peak velocities exceeding 1.0×107 cm/s. It is shown that the relaxation time approximation model tends to overestimate nonstationary carrier dynamics, especially the energy distribution
Keywords :
Monte Carlo methods; carrier mobility; insulated gate field effect transistors; semiconductor device models; 0.25 micron; MOSFETs; Monte Carlo; Si; energy distribution; nonstatic models; nonstationary carrier transport; peak velocities; relaxation time approximation modeling; Acoustic scattering; Electrons; Hot carriers; Large scale integration; MOSFETs; Monte Carlo methods; Optical scattering; Optimization methods; Particle scattering; Phonons;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
