DocumentCode
1163042
Title
GaAs as a semiconductor
Author
Hansell, Rick
Author_Institution
US Naval Ship Weapons Syst. Eng. Station, Pt. Hueneme, CA, USA
Volume
7
Issue
4
fYear
1988
Firstpage
9
Lastpage
12
Abstract
The characteristics of semiconductors that make them useful for devices, and the basic principles of the devices are explained. The effect of doping is given particular attention. The properties of GaAs that make it a desirable device material are examined. These are its high electron mobilities, which are essential to high-speed device applications, and its radiation resistance, which makes it a prime material for space and military applications.<>
Keywords
III-V semiconductors; carrier mobility; gallium arsenide; semiconductor devices; semiconductor doping; GaAs; III-V semiconductors; high electron mobilities; high-speed device applications; military applications; radiation resistance; space applications; Bonding; Charge carrier processes; Chemicals; Conducting materials; Electrons; Gallium arsenide; Lattices; Semiconductivity; Semiconductor materials; Temperature;
fLanguage
English
Journal_Title
Potentials, IEEE
Publisher
ieee
ISSN
0278-6648
Type
jour
DOI
10.1109/45.31563
Filename
31563
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