Title :
MOS2: an efficient MOnte Carlo Simulator for MOS devices
Author :
Sangiorgi, Enrico ; Riccó, Bruno ; Venturi, Franco
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
fDate :
2/1/1988 12:00:00 AM
Abstract :
An efficient Monte Carlo device simulator has been developed as a postprocessor of a two-dimensional numerical analyzer based on the drift-diffusion model. The Monte Carlo package analyzes real VLSI MOSFETs in a minicomputer environment, overcoming some existing theoretical and practical problems. In particular, the particle free-flight time distribution is obtained by a new algorithm, leading to a CPU time saving of at least one order of magnitude compared with the traditional approach. To describe rare electron configurations, such as the high-energy tails of the distributions and the particle dynamics in the presence of large retarding fields, a multiple repetition scheme was implemented. Selected applications are presented to illustrate the simulator´s capabilities
Keywords :
Monte Carlo methods; electronic engineering computing; insulated gate field effect transistors; metal-insulator-semiconductor devices; semiconductor device models; MOS devices; MOS2; Monte Carlo device simulator; VLSI MOSFETs; drift-diffusion model; minicomputer environment; multiple repetition scheme; particle free-flight time distribution; rare electron configurations; two-dimensional numerical analyzer; Acoustic scattering; Analytical models; Charge carrier density; Electrons; Impurities; MOS devices; MOSFETs; Microcomputers; Monte Carlo methods; Optical scattering; Packaging; Particle scattering; Phonons; Probability distribution; Very large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
