DocumentCode
1163479
Title
Interest in AlGaInAs on InP for optoelectronic applications
Author
Allovon, M. ; Quillec, M.
Author_Institution
CNET, Bagneux, France
Volume
139
Issue
2
fYear
1992
fDate
4/1/1992 12:00:00 AM
Firstpage
148
Lastpage
152
Abstract
The III-V AlGaInAs quaternary is particularly well suited to conventional molecular beam epitaxy, and many devices based on this material system have already proved of interest in high-performance microelectronics. However, although this lattice-matched-to-InP quaternary covers the same wavelength range as the well known GaInAsP system, it was not until recently considered as a serious challenger for optoelectronic applications. This is no longer the case, because of theoretical considerations and because of recent device achievements, especially low-threshold MQW laser diodes and high frequency electro-optic modulators
Keywords
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; AlGaInAs; InP; high frequency electro-optic modulators; high-performance microelectronics; lattice-matched-to-InP quaternary; low-threshold MQW laser diodes; material system; molecular beam epitaxy; optoelectronic applications; semiconductors;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
Filename
135848
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