Picosecond GaAs photoconductors on silicon substrates for local integration with silicon devices and circuits

Author

Morse, Jeffrey D. ; Mariella, Raymond ; Anderson, Gregory D. ; Dutton, Robert W.

Author_Institution

Lawrence Livermore Nat. Lab., CA, USA

Volume

10

Issue

1

fYear

1989

Firstpage

7

Lastpage

10

Abstract

A fabrication procedure for local integration of GaAs photoconductive devices with processed silicon circuits is discussed. The process allows isolated regions of GaAs to be epitaxially grown by MBE at temperatures which are compatible with already processed silicon circuits with first-level metallization. GaAs photoconductors with 15- mu m gap lengths fabricated on silicon substrates have exhibited >16-mA sampling-oscilloscope-limited responses, with electrical pulse widths less than 20 ps as determined by autocorrelation measurements.<>

Keywords

III-V semiconductors; gallium arsenide; integrated optoelectronics; photoconducting devices; silicon; GaAs-Si; MBE; Si substrate; autocorrelation; electrical pulse widths; fabrication procedure; first-level metallization; gap lengths; photoconductors; sampling-oscilloscope-limited responses; Circuits; Fabrication; Gallium arsenide; Molecular beam epitaxial growth; Photoconducting devices; Photoconductivity; Pulse measurements; Silicon; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31664

Filename

31664