DocumentCode
1163638
Title
Demonstration of a p-channel BICFET in the Ge/sub x/Si/sub 1-x//Si system
Author
Taft, R.C. ; Plummer, James D. ; Iyer, S.S.
Author_Institution
Standford Univ., CA, USA
Volume
10
Issue
1
fYear
1989
Firstpage
14
Lastpage
16
Abstract
Operational bipolar inversion-channel field-effect transistors (BICFETs) based on the Ge/sub x/Si/sub 1-x//Si system are discussed. The 300 K current gain of beta =365 at a current density of J/sub c/=2.5*10/sup 4/ A/cm/sup 2/ is the highest value reported for any BICFET to date. The use of a double-heterojunction inversion channel eliminates the collector offset voltage. The present devices are limited by the channel resistance, so that performance improvements are expected for laterally-scaled-down devices.<>
Keywords
Ge-Si alloys; bipolar transistors; field effect transistors; semiconductor materials; silicon; Ge/sub x/Si/sub 1-x/-Si; bipolar inversion-channel field-effect transistors; channel resistance; current density; current gain; double-heterojunction inversion channel; laterally-scaled-down devices; p-channel BICFET; Bipolar transistor circuits; Circuit stability; Current density; FETs; Implants; Logic circuits; Logic devices; Silicon; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.31666
Filename
31666
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