Improved subthreshold characteristics of n-channel MOS transistors fabricated in solid phase epitaxially regrown silicon-on-sapphire films

Author

Evans, I.R.

Author_Institution

GEC Hirst Res. Centre, Wembley, UK

Volume

10

Issue

1

fYear

1989

Firstpage

25

Lastpage

26

Abstract

Subthreshold characteristics of n-channel silicon-on-sapphire (SOS) MOSFETs have been measured following solid-phase epitaxial regrowth of the epitaxial film. Results obtained from planar n-channel transistors show that an increase in the subthreshold current slope can be obtained by improving the quality of the silicon layer. These results are explained in terms of a reduction in the density of interface traps present at the Si/SiO/sub 2/ interface.<>

Keywords

insulated gate field effect transistors; interface electron states; semiconductor growth; semiconductor-insulator boundaries; solid phase epitaxial growth; SOS MOSFETs; Si-Al/sub 2/O/sub 3/; Si-SiO/sub 2/ interface; density of interface traps; n-channel MOS transistors; planar n-channel transistors; solid-phase epitaxial regrowth; subthreshold characteristics; subthreshold current slope; Annealing; Epitaxial layers; Implants; MOSFETs; Semiconductor films; Silicon; Solids; Substrates; Subthreshold current; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31670

Filename

31670