p-channel FET based on p/n double-quantum-well heterostructure

An experimental demonstration of a p-channel FET based on a heterostructure having vertically integrated p- and n-type quantum-well channels is discussed. The AlGaAs/GaAs heterostructure consists of a quantum well with an underlying p-region positioned above a second quantum well with an underlying n-region. The p-FET is fabricated with self-aligned p/sup +/ regions formed by zinc diffusion. Electrical characteristics for 1.5- mu m gate lengths are nearly ideal in appearance with a maximum I/sub d/ of 90 mA/mm, a g/sub m/ of 80 mS/mm, and a g/sub m//g/sub d/ ratio of 140 at 77 K. The results demonstrate the viability of such stratified structures for the development of complementary integrated circuits or other circuits requiring integration of multiple device types.<>