Fabrication of 200-GHz f/sub max/ resonant-tunneling diodes for integration circuit and microwave applications

Author

Diamond, S.K. ; Ozbay, Ekmel ; Rodwell, M.J.W. ; Bloom, David M. ; Pao, Y.C. ; Wolak, E. ; Harris, James S.

Author_Institution

Stanford Univ., CA, USA

Volume

10

Issue

3

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

104

Lastpage

106

Abstract

Room-temperature current densities of 1.3*10/sup 5/ A/cm/sup 2/ and peak-to-valley ratios of 2.5 have been achieved for resonant tunneling diodes (RTDs) in the GaAs/AlAs material system. The devices were fabricated in a microwave-compatible process using topside contacts and a semi-insulating substrate to allow device integration. Proton implantation creates a nonconducting surface compatible with high-frequency coplanar transmission lines and other passive microwave structures.<>

Keywords

aluminium compounds; gallium arsenide; microwave integrated circuits; solid-state microwave devices; tunnel diodes; 200 GHz; GaAs-AlAs; current densities; device integration; high-frequency coplanar transmission lines; microwave applications; nonconducting surface; peak-to-valley ratios; resonant-tunneling diodes; semi-insulating substrate; topside contacts; Capacitance; Diodes; Fabrication; Frequency; Gallium arsenide; Microwave circuits; Microwave devices; RLC circuits; Resonant tunneling devices; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31683

Filename

31683