DocumentCode
1163813
Title
p-n-p heterojunction bipolar transistors with buried subcollector layers
Author
Bayraktaroglu, Burhan ; Lambert, Steve A.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
Volume
10
Issue
3
fYear
1989
fDate
3/1/1989 12:00:00 AM
Firstpage
120
Lastpage
122
Abstract
The buried-layer technology was applied to the fabrication of high-speed p-n-p AlGaAs/GaAs heterojunction bipolar transistors (HBTs). The subcollector layer was selectively implanted prior to the epitaxial growth of the rest of the device structure thereby eliminating the need for deep mesa isolation. Devices with 2*10- mu m/sup 2/ emitter fingers and 100-nm base thickness had common-emitter current gains of 15 and cutoff frequencies of 17 GHz.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; 17 GHz; base thickness; buried subcollector layers; buried-layer technology; common-emitter current gains; cutoff frequencies; emitter fingers; epitaxial growth; heterojunction bipolar transistors; subcollector layer; Cutoff frequency; Doping; Epitaxial layers; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Ion implantation; Microwave devices; Silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.31688
Filename
31688
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