DocumentCode
1163940
Title
Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors
Author
Kurtz, S.R. ; Dawson, L.R. ; Biefeld, R.M. ; Fritz, I.J. ; Zipperian, Thomas E.
Author_Institution
Sandia Nat. Labs. Albuquerque, NM, USA
Volume
10
Issue
4
fYear
1989
fDate
4/1/1989 12:00:00 AM
Firstpage
150
Lastpage
152
Abstract
Long-wavelength infrared photodiodes were fabricated using InAs/sub 1-x/Sb/sub x//InSb (x=0.82-0.85) strained-layer superlattices (SLSs). These structures can be grown using either molecular-beam epitaxy or metalorganic chemical vapor deposition. These photodiodes display broad spectral responses up to wavelengths greater than or approximately equal to 10 mu m, and detectivities of 1*10/sup 9/ cm-Hz/sup 1/2//W at 10 mu m.<>
Keywords
III-V semiconductors; indium antimonide; indium compounds; infrared detectors; photodiodes; semiconductor superlattices; 5 to 10 micron; IR detectors; InAs/sub 1-x/Sb-InSb; broad spectral responses; detectivities; long wavelength IR photodiodes; metalorganic chemical vapor deposition; molecular-beam epitaxy; strained-layer superlattice; Doping; Electromagnetic wave absorption; Gallium arsenide; Infrared detectors; Laser sintering; Photodiodes; Photovoltaic systems; Solar power generation; Substrates; Superlattices;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.31700
Filename
31700
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