Title :
All-optical NAND gate using cross-gain modulation in semiconductor optical amplifiers
Author :
Kim, S.H. ; Kim, J.H. ; Yu, B.G. ; Byun, Y.T. ; Jeon, Y.M. ; Lee, S. ; Woo, D.H. ; Kim, S.H.
Author_Institution :
Photonics Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
By using gain nonlinearity characteristics of a semiconductor optical amplifier, an all-optical NAND gate at 10 Gbit/s is demonstrated. The all-optical NAND gate operates in single mechanism, which is cross-gain modulation. In the NAND gate (AB~+A~), Boolean AB~ is obtained by using signal A as a probe beam and signal B as a pump beam in SOA-1. Also, Boolean A~ is obtained by using the clock signal as a probe beam and signal A as a pump beam in SOA-2. By adding the two outputs from SOA-1 and SOA-2, Boolean A~+AB~ (logic NAND) can be acquired. The extinction ratio is about 6.1 dB.
Keywords :
NAND circuits; logic gates; optical logic; optical modulation; semiconductor optical amplifiers; 10 Gbit/s; all-optical NAND gate; clock signal; cross-gain modulation; gain nonlinearity characteristics; logic NAND; probe beam; pump beam; semiconductor optical amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20052320
