1.55 μm InGaAsP/InP laser buried in a high-resistivity epitaxial layer on a semi-insulating InP substrate

Author

Sakai, Yoshiki ; Itaya, Y. ; Matsumoto, Shinichi ; Fukuda, Motohisa ; Yamamoto, Manabu

Author_Institution

NTT Opto-Electron. Labs., Kanagawa

Volume

30

Issue

18

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

1481

Lastpage

1482

Abstract

A buried heterostructure (BH) 1.55 μm laser embedded in a high resistivity epitaxial layer on a semi-insulating substrate is described. This device has a planar surface and both a p- and an n-type electrode on the same side, facilitating integration of electronic devices. Its threshold current is typically 9 mA. Its small signal 3 dB modulation bandwidth was 14 GHz due to the reduction of device resistance and capacitance. No degradation was observed in an aging test at 50°C even after more than 3000 h

Keywords

III-V semiconductors; ageing; gallium arsenide; indium compounds; optical modulation; semiconductor device testing; semiconductor epitaxial layers; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.55 micron; 14 GHz; 50 degC; 9 mA; InGaAsP-InP; InGaAsP/InP laser; InP; aging test; buried heterostructure laser; device capacitance; device resistance; high-resistivity epitaxial layer; modulation bandwidth; planar surface; semi-insulating InP substrate; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19941048

Filename

317025