Title :
1.55 μm InGaAsP/InP laser buried in a high-resistivity epitaxial layer on a semi-insulating InP substrate
Author :
Sakai, Yoshiki ; Itaya, Y. ; Matsumoto, Shinichi ; Fukuda, Motohisa ; Yamamoto, Manabu
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
9/1/1994 12:00:00 AM
Abstract :
A buried heterostructure (BH) 1.55 μm laser embedded in a high resistivity epitaxial layer on a semi-insulating substrate is described. This device has a planar surface and both a p- and an n-type electrode on the same side, facilitating integration of electronic devices. Its threshold current is typically 9 mA. Its small signal 3 dB modulation bandwidth was 14 GHz due to the reduction of device resistance and capacitance. No degradation was observed in an aging test at 50°C even after more than 3000 h
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; optical modulation; semiconductor device testing; semiconductor epitaxial layers; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.55 micron; 14 GHz; 50 degC; 9 mA; InGaAsP-InP; InGaAsP/InP laser; InP; aging test; buried heterostructure laser; device capacitance; device resistance; high-resistivity epitaxial layer; modulation bandwidth; planar surface; semi-insulating InP substrate; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941048
